Stacked image sensor having a barrier layer

ABSTRACT

An image sensor includes a sensor portion and an ASIC portion bonded to the sensor portion. The sensor portion includes a first substrate having radiation-sensing pixels, a first interconnect structure, a first isolation layer, and a first dielectric layer. The ASIC portion includes a second substrate, a second isolation layer, and a second dielectric layer. The material compositions of the first and second isolation layers and the first and second dielectric layers are configured such that the first and second isolation layers may serve as barrier layers to prevent copper diffusion into oxide. The first and second isolation layers may also serve as etching-stop layers in the formation of the image sensor.

PRIORITY DATA

The present application is a continuation application of U.S. patentapplication Ser. No. 14/228,346, filed Mar. 28, 2014, entitled “StackedImage Sensor Having a Barrier Layer”, the entire disclosure of which isincorporated herein by reference.

BACKGROUND

Semiconductor image sensors are used to sense radiation such as light.Complementary metal-oxide-semiconductor (CMOS) image sensors (CIS) andcharge-coupled device (CCD) sensors are widely used in variousapplications such as digital still camera or mobile phone cameraapplications. These devices utilize an array of pixels (which mayinclude photodiodes and transistors) in a substrate to absorb (i.e.,sense) radiation that is projected toward the substrate and convert thesensed radiation into electrical signals.

A back side illuminated (BSI) image sensor device is one type of imagesensor device. These BSI image sensor devices are operable to detectlight from the backside. Compared to front side illuminated (FSI) imagesensor devices, BSI image sensor devices have improved performance,especially under low light conditions. However, traditional methods offabricating BSI image sensor devices may still lead to certainshortcomings for BSI image sensor devices. For example, thereshortcomings may pertain to lack of surface smoothness for metal linesand/or leakage current. These problems may be caused by undesirablecopper diffusion into neighboring oxide, which may occur in BSI imagesensor device fabricated using conventional methods. Hence, whileexisting BSI image sensor devices have been generally adequate for theirintended purposes, they have not been entirely satisfactory in everyaspect.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1-12 are simplified fragmentary cross-sectional side views of aportion of an image sensor device at various stages of fabrication inaccordance with some embodiments.

FIG. 13 is a flowchart illustrating a method of fabricating an imagesensor device in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

FIG. 1-12 are simplified diagrammatic fragmentary sectional side viewsa. BSI image sensor device 30 at various stages of fabrication accordingto aspects of the present disclosure. The image sensor device 30includes an array or grid of pixels for sensing and recording anintensity of radiation (such as light) directed toward a backside of theimage sensor device 30. The image sensor device 30 may include acharge-coupled device (CCD), complimentary metal oxide semiconductor(CMOS) image sensor (CIS), an active-pixel sensor (APS), or apassive-pixel sensor. The image sensor device 30 further includesadditional circuitry and input/outputs that are provided adjacent to thegrid of pixels for providing an operation environment for the pixels andfor supporting external communication with the pixels. It is understoodthat FIGS. 2 to 6 have been simplified for a better understanding of theinventive concepts of the present disclosure and may not be drawn toscale.

With reference to FIG. 1, the image sensor device 30 includes a sensorwafer 32. The sensor wafer 32 contains a silicon substrate doped with ap-type dopant such as boron (for example a p-type substrate) in theillustrated embodiment. Alternatively, the sensor wafer 32 could containanother suitable semiconductor material. For example, the sensor wafer32 may include a silicon substrate that is doped with an n-type dopantsuch as phosphorous or arsenic (an n-type substrate). The substrate ofthe sensor wafer 32 could contain other elementary semiconductors suchas germanium and diamond. The substrate of the sensor wafer 32 couldoptionally include a compound semiconductor and/or an alloysemiconductor. Further, the sensor wafer 32 could include an epitaxiallayer (epi layer), may be strained for performance enhancement, and mayinclude a silicon-on-insulator (SOI) structure.

Referring back to FIG. 1, the sensor wafer 32 has a front side (alsoreferred to as a front surface) 34 and a back side (also referred to asa back surface) 36. The sensor wafer 32 also has an initial thickness 38that is in a range from about 100 microns (um) to about 3000 um. In thepresent embodiment, the initial thickness 38 is in a range from about500 um to about 1000 um.

Radiation-sensing regions for example, pixels 40 and 42—are formed inthe sensor wafer 32. The pixels 40 and 42 are configured to senseradiation, such as an incident light 43, that is projected toward sensorwafer 32 from the back side 36. The pixels 40 and 42 each include aphotodiode in the present embodiment. In other embodiments, the pixels40 and 42 may include pinned layer photodiodes, photogates, resettransistors, source follower transistors, and transfer transistors. Thepixels 40 and 42 may also be referred to as radiation-detection devicesor light-sensors.

The pixels 40 and 42 may be varied from one another to have differentjunction depths, thicknesses, widths, and so forth. For the sake ofsimplicity, only two pixels 40 and 42 are illustrated in FIG. 1, but itis understood that any number of pixels may be implemented in the sensorwafer 32. In the embodiment shown, the pixels 40 and 42 are formed byperforming an implantation process 46 on the sensor wafer 32 from thefront side 34. The implantation process 46 includes doping the sensorwafer 32 with a p-type dopant such as boron. In an alternativeembodiment, the implantation process 46 may include doping the sensorwafer 32 with an n-type dopant such as phosphorous or arsenic. In otherembodiments, the pixels 40 and 42 may also be formed by a diffusionprocess.

Referring back to FIG. 1, the sensor wafer 32 includes isolationstructures for example, isolation structures 47 and 49 that provideelectrical and optical isolation between the pixels 40 and 42. Theisolation structures 47 and 49 include shallow trench isolation (STI)structures that are formed of a dielectric material such as siliconoxide or silicon nitride. The STI structures are formed by etchingopenings into the substrate 32 from the front side 34 and thereafterfilling the openings with the dielectric material. In other embodiments,the isolation structures 47 and 49 may include doped isolation features,such as heavily doped n-type or p-type regions. It is understood thatthe isolation structures 47 and 49 are formed before the pixels 40 and42 in the present embodiment. Also, for the sake of simplicity, only twoisolation structures 47 and 49 are illustrated in FIG. 1, but it isunderstood that any number of isolation structures may be implemented inthe sensor wafer 32 so that the radiation-sensing regions such as pixels40 and 42 may be properly isolated from one another.

Still referring to FIG. 1, the pixels 40 and 42 and isolation structures47 and 49 are formed in a region of the image sensor device 30 referredto as a pixel region 52 (or a pixel-array region). The image sensor 30may also include a periphery region 54, a bonding pad region 56, and ascribe line region 59. The dashed lines in FIG. 1 designate theapproximate boundaries between the regions 52, 54, 56, and 59. Theperiphery region 54 includes devices 60 and 61 that need to be keptoptically dark. For example, the device 60 in the present embodiment maybe a digital device, such as an application-specific integrated circuit(ASIC) device or a system-on-chip (SOC) device. The device 61 may be areference pixel that is used to establish a baseline of an intensity oflight for the image sensor device 30.

The bonding pad region 56 includes a region where one or more bondingpads (not illustrated) of image sensor device 30 will be formed in alater processing stage, so that electrical connections between the imagesensor device 30 and outside devices may be established. The scribe lineregion 59 includes a region that separates one semiconductor die (forexample, a semiconductor die that includes the bonding pad region 56,the periphery region 54, and the pixel region 52) from an adjacentsemiconductor die (not illustrated). The scribe line region 59 is cuttherethrough in a later fabrication process to separate adjacent diesbefore the dies are packaged and sold as integrated circuit chips. Thescribe line region 59 is cut in such a way that the semiconductordevices in each die are not damaged. It is also understood that theseregions 52-59 extend vertically above and below the sensor wafer 32.

Referring now to FIG. 2, an interconnect structure 65 is formed over thefront side 34 of the sensor wafer 32. The interconnect structure 65includes a plurality of patterned dielectric layers and conductivelayers that provide interconnections (e.g., wiring) between the variousdoped features, circuitry, and input/output of the image sensor device30. The interconnect structure 65 includes an interlayer dielectric(ILD) and a multilayer interconnect (MLI) structure. The MLI structureincludes contacts, vias and metal lines. For purposes of illustration, aplurality of conductive lines 66 and vias/contacts 68 are shown in FIG.2, it being understood that the conductive lines 66 and vias/contacts 68illustrated are merely exemplary, and the actual positioning andconfiguration of the conductive lines 66 and vias/contacts 68 may varydepending on design needs.

The MLI structure may include conductive materials such as aluminum,aluminum/silicon/copper alloy, titanium, titanium nitride, tungsten,polysilicon, metal silicide, or combinations thereof, being referred toas aluminum interconnects. Aluminum interconnects may be formed by aprocess including physical vapor deposition (PVD) (or sputtering),chemical vapor deposition (CVD), atomic layer deposition (ALD), orcombinations thereof. Other manufacturing techniques to form thealuminum interconnect may include photolithography processing andetching to pattern the conductive materials for vertical connection (forexample, vias/contacts 68) and horizontal connection (for example,conductive lines 66). Alternatively, a copper multilayer interconnectmay be used to form the metal patterns. The copper interconnectstructure may include copper, copper alloy, titanium, titanium nitride,tantalum, tantalum nitride, tungsten, polysilicon, metal silicide, orcombinations thereof. The copper interconnect structure may be formed bya technique including CVD, sputtering, plating, or other suitableprocesses.

Traditionally, after the formation of the interconnect structure 65, acarrier wafer is bonded to the sensor wafer 32 from the front side 34,and thereafter a back side thinning process will then be performed tothin the sensor wafer 32 from the back side. According to the variousaspects of the present disclosure, however, an Application SpecificIntegrated Circuit (ASIC) wafer is bonded to the front side 34 of thesensor wafer 32 instead, rather than a carrier wafer. This is shown inFIG. 3, which is a more detailed cross-sectional side view of theperiphery region 54 of the image sensor device 30.

Referring to FIG. 3, an ASIC wafer 100 is provided. Unlike thetraditional carrier wafer, the ASIC wafer 100 includes electroniccircuitry and electrical interconnections. For example, the ASIC wafer100 includes a substrate 110, which may be a silicon substrate. Aplurality of microelectronic devices are formed at least partially inthe substrate 110, such as transistors, capacitors, inductors,resistors, etc. In some embodiments, the electronic circuitry formed bythese microelectronic devices may include circuitry for controllingand/or operating the sensor device 30. For reasons of simplicity, thesemicroelectronic devices formed in the substrate 110 are not specificallyillustrated herein.

The ASIC wafer 100 also includes an interconnect structure 120 that isdisposed over the substrate 110. Similar to the interconnect structure65, the interconnect structure 120 may include a plurality ofinterconnect layers that each contain one or more metal lines, which areelectrically interconnected together by a plurality of vias. Forpurposes of explaining the various aspects of the present disclosure inmore detail, an interconnect layer 130 of the interconnect structure 120is illustrated. The interconnect layer 130 is the interconnect layerlocated at the topmost level of the interconnect structure 120. In otherwords, the interconnect layer 130 is located farther away from thesubstrate 110 than the other interconnect layers of the interconnectstructure 120. As illustrated, the interconnect layer 130 includes anexample metal line 135. In some embodiments, the metal line 135 containscopper (Cu).

The ASIC wafer 100 further includes an isolation (or insulation) layer140 that is disposed on the interconnect layer 130. In the embodimentshown, the isolation layer 140 and the interconnect layer 130 are inphysical or direct contact with one another. In some embodiments, theisolation layer 140 contains silicon nitride. The silicon nitride may beformed by a plasma enhanced chemical vapor deposition (PECVD) process.The isolation layer 140 serves at least two purposes. First, theisolation layer 140 may function as a barrier layer to preventdiffusion, such as diffusion of copper into silicon oxide. Second, theisolation layer 140 may function as an etching-stop layer in a laterprocess. Each of these two purposes of the isolation layer 140 will bediscussed below in more detail.

The ASIC wafer 100 also includes a dielectric layer 150 that is disposedover the isolation layer 140. In some embodiments, the dielectric layer150 contains silicon oxide. The dielectric layer 150 may be planarizedto form a smooth surface, for example by a chemical mechanical polishing(CMP) process.

The interconnect structure 65 also includes an interconnect layer 230.The interconnect layer 230 is the interconnect layer located at thetopmost (herein shown at the bottom, since the interconnect structure 65is flipped upside down) level of the interconnect structure 65. In otherwords, the interconnect layer 230 is located farther away from thesubstrate 32 than the other interconnect layers of the interconnectstructure 65. As illustrated, the interconnect layer 230 includesexample metal lines 235 and 236. In some embodiments, the metal lines235-236 each contain copper (Cu).

An isolation (or insulation) layer 240 is formed on the interconnectlayer 230. In the embodiment shown, the isolation layer 240 and theinterconnect layer 230 are in physical or direct contact with oneanother. In some embodiments, the isolation layer 240 contains siliconnitride. The silicon nitride may be formed by a plasma enhanced chemicalvapor deposition (PECVD) process. In other embodiments, the isolationlayer 240 may contain silicon carbide or silicon oxy-nitride. Theisolation layer 240 may also function as a barrier layer to preventdiffusion, such as diffusion of copper into silicon oxide, which will bediscussed below in more detail.

A dielectric layer 250 is also formed over the isolation layer 240. Insome embodiments, the dielectric layer 250 contains silicon oxide. Thedielectric layer 250 may be planarized to form a smooth surface, forexample by a CMP process.

The ASIC wafer 100 is bonded to the sensor wafer 32 in a bonding process300. In more detail, the dielectric layer 250 is bonded to thedielectric layer 150. The smooth surfaces of the dielectric layers 150and 250 facilitate their bonding. In some embodiments, the bondingprocess 300 includes a molecular force bonding, also known as directbonding or optical fusion bonding. In other embodiments, the bondingprocess 300 may include other suitable bonding techniques known in theart.

As discussed above, the isolation layers 140 and 240 may serve asbarrier layers to prevent or reduce copper diffusion. As can be seen inFIG. 3, had the isolation layer 140 not been formed, the copper materialof the metal line 135 of the interconnect layer 130 would have come intodirect contact with the oxide material of the dielectric layer 150.Similarly, had the isolation layer 240 not been formed, the coppermaterial of the metal line 235 of the interconnect layer 230 would havecome into direct contact with the oxide material of the dielectric layer250. When copper comes into direct contact with silicon oxide, thecopper material may diffuse into the silicon oxide material, which isundesirable. Copper diffusion is exacerbated by the performance of oneor more high temperature thermal processes, which may be needed tocomplete the fabrication of the image sensor device 30. As copperdiffuses into silicon oxide, the metal lines 135 or 235 may exhibitvoids or pits on their surfaces. In other words, the metal lines 135 or235 may be somewhat deformed, which will degrade their performance.Furthermore, as copper gets diffused into the silicon oxide, the siliconoxide normally electrically insulating may now become somewhatelectrically conductive. This may lead to electrical leakage issues.

According to the various aspects of the present disclosure, theimplementation of the isolation layer 140 prevents the copper materialof the metal line 135 from coming into physical contact with the siliconoxide material of the dielectric layer 150, thereby effectivelypreventing or reducing the copper diffusion into the silicon oxide. Thesame is true for the isolation layer 240, as it prevents the coppermaterial of the metal line 235 from coming into physical contact withthe silicon oxide material of the dielectric layer 250. In this manner,the isolation layers 140 and 240 each serve as a barrier layer.Consequently, the metal lines 135 and 235 may be able to maintain theirdesired shapes and surface smoothness, and the dielectric layers 150 and250 may still be electrically insulating so as to avoid any electricalleakage issues.

Referring now to FIG. 4, the sensor wafer 32 and the ASIC wafer 100 arebonded together, thereby forming a bonding interface 310 therebetween.In the illustrated embodiment, the bonding interface 310 exists betweenthe bottom surface of the dielectric layer 250 and the top surface ofthe dielectric layer 150. The ASIC wafer 100 not only provideselectrical circuitry for facilitating the operations of the image sensordevice 30, but also provides protection for the various elements formedon the front side 34 of the sensor wafer 32, such as the pixels 40 and42 (shown in FIGS. 1-2), as well as providing mechanical strength andsupport for processing the back side 36 of the sensor wafer 32.

In more detail, a thinning process 320 is performed to thin the sensorwafer 32 from the backside 36. The thinning process 80 may include amechanical grinding process and a chemical thinning process. Asubstantial amount of substrate material may be first removed from thesensor wafer 32 during the mechanical grinding process. Afterwards, thechemical thinning process may apply an etching chemical to the back side36 of the sensor wafer 32 to further thin the sensor wafer 32 to areduced thickness 330 from its original thickness 38, which is on theorder of a few microns. In the present embodiment, the thickness 330 isless than about 5 microns, for example about 2-3 microns. In anembodiment, the thickness 85 is greater than at least about 1 micron. Itis also understood that the particular thicknesses disclosed in thepresent disclosure are mere examples and are not limiting, and thatother thicknesses may be implemented depending on the type ofapplication and design requirements of the image sensor device 30.

After the thinning process 320 is performed, an opening 340 (or recess)is formed in the substrate of the sensor wafer 32 from the back side 36.The opening 340 may be formed by an etching process in some embodiments.The opening 340 may vertically extend substantially through thesubstrate of the sensor wafer 32. The opening 340 may also be relativelywide, for example it may have a lateral dimension (or width) in a rangefrom about 80 microns to about 90 microns. After the opening 340 isformed, a dielectric layer 350 is formed in the opening 350, asillustrated in FIG. 4. In some embodiments, the dielectric layer 350contains silicon oxide, though other suitable materials may also be usedin alternative embodiments. Thereafter, another opening 360 may beformed in the interconnect structure 65 to expose one of the metal lines370 of an interconnect layer. The opening 360 may also be referred to asa shallow trench.

Referring now to FIG. 5, another opening 380 is formed in the sensorwafer 32. The opening 380 is formed to vertically extend through theentire sensor wafer 32 as well as the dielectric layer 150 of the ASICwafer 100. The opening 380 may also be referred to as a deep trench andmay be formed through one or more suitable etching processes. Forexample, in some embodiments, an etching process may be performed toform the opening 380 in the sensor wafer 32 (and the layers disposedbelow), followed by another etching process to extend the opening 380 tothe ASIC wafer 100. In other embodiments, a single etching process maybe performed to form the opening 380 through both the sensor wafer 32and the ASIC wafer 100. The isolation layer 140 serves as anetching-stop layer during the formation of the opening 380, and as suchthe opening 380 exposes a portion of the isolation layer 140. One reasonthat the isolation layer 140 is capable of serving as the etching-stoplayer herein is the high etching selectivity between itself and theother layers etched through by the etching processes, for example thedielectric layers 150 and 250. As discussed above, the isolation layer140 contains silicon nitride in the illustrated embodiment, whereas thedielectric layers 150 and 250 each contain silicon oxide. Etchants usedin the etching processes to form the opening 380 can be easily designedto have a significantly faster etching rate with respect to siliconoxide than with respect to silicon nitride. Therefore, the etchingprocesses can easily remove the silicon oxide materials of thedielectric layers 150 and 250 but will stop when the silicon nitridematerial of the isolation layer 140 is reached.

Referring now to FIG. 6, the portion of the isolation layer 140 exposedby the opening 380 is removed, for example by another etching process.This process may also be referred to as a liner removal process. As aresult of the removal of the isolation layer 140 in the opening 380, aportion of the metal line 135 is now exposed by the opening 380.

Referring now to FIG. 7, a conductive layer 390 is formed in theopenings 340 and 380. The conductive layer 390 may be formed by asuitable deposition process, for example CVD, PVD, ALD, or combinationsthereof. In some embodiments, the conductive layer 390 contains a metalmaterial, for example aluminum copper (AlCu). As is illustrated in FIG.7, the conductive layer 390 is formed to be electrically coupled withthe interconnect structure 65 of the sensor wafer 32 (e.g., throughphysical contact with the metal line 370). The conductive layer 390 isalso formed to be electrically coupled with the interconnect structure120 of the ASIC wafer 100 (e.g., through physical contact with the metalline 135). In this manner, the sensor wafer 32 and the ASIC wafer 100are electrically coupled together at least in part by the conductivelayer 390.

FIGS. 3-7 illustrate one embodiment of establishing electricalinterconnections between the sensor wafer 32 and the ASIC wafer 100.FIGS. 8-12 illustrate an alternative embodiment of establishingelectrical interconnections between the sensor wafer 32 and the ASICwafer 100. For reasons of simplicity, however, similar components andprocesses in both embodiments are labeled the same throughout FIGS.3-12.

Referring to FIG. 8, an ASIC wafer 100 is provided and then bonded tothe sensor wafer 32. Once again, the isolation layers 140 and 240 (e.g.,containing silicon nitride) are formed on the ASIC wafer 100 and thesensor wafer 32, respectively. The dielectric layers 150 and 250 arealso formed on the isolation layers 140 and 240, respectively. Similarto their roles in the embodiment discussed above in association withFIGS. 3-7, the isolation layers 140 and 240 will also serve as barrierlayers to reduce copper diffusion into silicon oxide in the embodimentdiscussed below. The isolation layer 140 also serves as an etching stoplayer in a deep trench etching process discussed below.

Referring now to FIG. 9, the sensor wafer 32 and the ASIC wafer 100 arebonded together. After the substrate of the sensor wafer 32 is thinneddown from the back side, an opening 400 is formed in the substrate ofthe sensor wafer 32. Similar to the opening 340 (shown in FIG. 5), theopening 400 vertically extends substantially through the substrate ofthe sensor wafer 32. Unlike the opening 340, however, the opening 400herein is substantially narrower. For example, the opening 400 may havea lateral dimension (or width) in a range from about 5 microns to about20 microns, which is substantially less than the lateral dimension ofabout 80 microns to about 90 microns for the opening 340. After theopening 400 is formed, the dielectric layer 350 is formed in the opening400 and over the back side surface of the substrate of the sensor wafer32.

Referring now to FIG. 10, the opening 400 is extended further downwardthrough one or more etching processes until the isolation layer 140 isreached. This process may also be referred to as a deep trenchpatterning or deep trench etching process. The opening 400 now containsa deep trench 410 that exposes a portion of the isolation layer 140.Again, the isolation layer 140 serves as the etching-stop layer in thedeep trench etching process herein due to its high etching selectivitywith the dielectric layers 150 and 250.

Referring now to FIG. 11, the portion of the isolation layer 140 exposedby the deep trench 410 is removed, for example by another etchingprocess. This process may also be referred to as a liner removalprocess. As a result of the removal of the isolation layer 140, aportion of a metal line 136 is now exposed.

Referring now to FIG. 12, a via 420 is formed in the opening 420 (and inthe deep trench 410. The via 420 may be formed by one or more suitabledeposition processes, for example CVD, PVD, ALD, or combinationsthereof, followed by one or more planarization processes, for example aCMP process. In some embodiments, the via 420 contains a metal material,for example copper. In alternative embodiments, other suitableconductive materials may be used. As is illustrated in FIG. 12, the via420 is formed to be electrically coupled with the interconnect structure65 of the sensor wafer 32 (e.g., through physical contact with the metalline 235). The via 420 is also formed to be electrically coupled withthe interconnect structure 120 of the ASIC wafer 100 (e.g., throughphysical contact with the metal line 136). In this manner, the sensorwafer 32 and the ASIC wafer 100 are electrically coupled together atleast in part by the via 420.

FIG. 13 is a simplified flowchart illustrating a method 500 offabricating an image sensor device according to embodiments of thepresent disclosure. The method 500 includes a step 510 of providing asensor wafer. The sensor wafer includes a first substrate having a firstside and a second side opposite the first side. A radiation-sensingregion is disposed in the first substrate. The radiation-sensing regionis configured to detect radiation that enters the first substratethrough the second side. The sensor wafer also includes a firstinterconnect structure that is disposed over the first side of the firstsubstrate. The sensor wafer also includes a first isolation layer thatis disposed over the first interconnect structure. The sensor waferfurther includes a first dielectric layer that is disposed over thefirst isolation layer. The first isolation layer and the firstdielectric layer have different material compositions.

The method 500 includes a step 520 of providing an ASIC wafer. The ASICwafer includes a second substrate. The ASIC wafer includes a secondinterconnect structure that is disposed over the second substrate. TheASIC wafer further includes a second isolation layer that is disposedover the second interconnect structure. The ASIC wafer also includes asecond dielectric layer hat is disposed over the second isolation layer.The second isolation layer and the second dielectric layer havedifferent material compositions.

The method 500 includes a step 530 of bonding the sensor wafer and theASIC wafer together. The sensor wafer and the ASIC wafer are bondedtogether at least in part through the first dielectric layer and thesecond dielectric layer.

In some embodiments, the steps 510 and 520 are performed such that: thefirst dielectric layer and the second dielectric layer each containsilicon oxide; and the first isolation layer and the second isolationlayer each contain silicon nitride.

In some embodiments, the steps 510 and 520 are performed such that: thefirst interconnect structure and the second interconnect structure eachinclude a plurality of interconnect layers, and wherein each of theinterconnect layers contain one or more metal lines. In someembodiments, the metal lines contain copper.

In some embodiments, the method 500 further includes the followingsteps: forming, in a periphery region of the image sensor that isseparate from a pixel region of the image sensor in which theradiation-sensing region is disposed, a first opening that verticallyextends through the first substrate, the first opening exposing aportion of the first interconnect structure; forming, in the peripheryregion of the image sensor, a second opening that vertically extendsthrough the sensor wafer and through the second dielectric layer and thesecond isolation layer of the ASIC wafer, the second opening exposing aportion of the second interconnect structure; and forming a conductivelayer in the first opening and the second opening, wherein theconductive layer is formed to be in electrical contact with both theportion of the first interconnect structure in the first opening and theportion of the second interconnect structure in the second opening.

In some embodiments, the method 500 further includes the followingsteps: forming, in a periphery region of the image sensor that isseparate from a pixel region of the image sensor in which theradiation-sensing region is disposed, a conductive via that verticallyextends from the second side of the first substrate to the secondinterconnect structure, wherein the conductive via is formed to be inelectrical contact with both the first interconnect structure and secondinterconnect structure.

It is understood that additional process steps may be performed before,during, or after the steps 510-530 discussed above to complete thefabrication of the semiconductor device. For example, the step 510 ofproviding the sensor wafer may include various steps of forming theradiation-sensing region in the first substrate, forming the firstisolation layer and forming the first dielectric layer, etc. The step520 of providing the ASIC wafer may include various steps of formingmicroelectronic components in the second substrate, forming the secondisolation layer and forming the second dielectric layer, etc. Inaddition, after the bonding step 530 is performed, the method 500 mayfurther include a wafer thinning process to thin the first substratefrom the second side, as well as one or more wafer dicing, testing,and/or packaging processes. Other process steps are not discussed hereinfor reasons of simplicity.

The embodiments of the present disclosure discussed above offeradvantages over existing art, though it is understood that differentembodiments may offer other advantages, not all advantages arenecessarily discussed herein, and that no particular advantage isrequired for all embodiments. One of the advantages is that the presentdisclosure utilizes an isolation layer, for example the isolation layers140 and 240, to serve as barrier layers. As discussed above, withoutthese isolation layers 140 and 240, the copper material of the metallines of the interconnect structures may diffuse into a neighboringsilicon oxide layer. The copper diffusion leads to surface unevenness orvoids in these metal lines, thereby degrading the performance of theimage sensor device 30. Here, the silicon nitride material of theisolation layers 140 and 240 effectively prevent or reduce such copperdiffusion, thereby improving the performance of the image sensor device30. Another advantage is that the isolation layer 140 may also serve asan etching-stop layer in the deep trench formation processes. Thissimplifies fabrication process flow. Other advantages includecompatibility with existing technologies, and therefore neither cost norfabrication time is increased. In addition, the stacked CIS approach(i.e., by bonding the ASIC wafer 100 and the sensor wafer 32 together)allows integration with different characteristic devices or substrateson one chip. The stacked CIS approach also offers reduction in metalrouting and chip area.

One embodiment of the present disclosure pertains to an image sensor.The image sensor includes a sensor portion. The sensor portion includesa first substrate having a first side and a second side opposite thefirst side. A radiation-sensing region is formed in the first substrate.The radiation-sensing region is configured to detect radiation thatenters the first substrate through the second side. The sensor waferincludes a first interconnect structure that is disposed over the firstside of the first substrate. The sensor wafer also includes a firstisolation layer that is disposed over the first interconnect structure.The sensor wafer further includes a first dielectric layer that isdisposed over the first isolation layer. The first isolation layer andthe first dielectric layer have different material compositions. Theimage sensor also includes an ASIC portion. The ASIC portion includes asecond substrate, a second interconnect structure disposed over thesecond substrate, a second isolation layer disposed over the secondinterconnect structure, and a second dielectric layer disposed over thesecond isolation layer. The second isolation layer and the seconddielectric layer have different material compositions. The sensorportion and the ASIC portion are bonded together at least in partthrough the first dielectric layer and the second dielectric layer.

Another embodiment of the present disclosure pertains to an imagesensor. The image sensor includes a sensor portion. The sensor portionincludes a first substrate having a front side and a back side. A pixelis formed the first substrate. The pixel is configured to sense lightthat is projected toward the first substrate from the back side. Thepixel is disposed in a pixel-array region of the image sensor. Thesensor portion includes a first interconnect structure disposed over thefront side of the first substrate. The first interconnect structurecontains a plurality of first interconnect layers. The sensor portionalso includes a first silicon nitride layer disposed over the firstinterconnect structure. The sensor portion further includes a firstsilicon oxide layer disposed over the first silicon nitride layer. Theimage sensor also includes an Application Specific Integrated Circuit(ASIC) portion. The ASIC portion includes a second substrate thatcontains a plurality of microelectronic devices therein. The ASICportion includes a second interconnect structure disposed over thesecond substrate. The second interconnect structure contains a pluralityof second interconnect layers. The ASIC portion also includes a secondsilicon nitride layer disposed over the second interconnect structure.The ASIC portion further includes a second silicon oxide layer disposedover the second silicon nitride layer. The sensor portion and the ASICportion are bonded together in a manner such that a bonding interfaceexists the first silicon oxide layer and the second silicon oxide layer.

Yet another embodiment of the present disclosure pertains to a method offabricating an image sensor. The method includes a step of providing asensor wafer that includes: a first substrate having a first side and asecond side opposite the first side; a radiation-sensing region disposedin the first substrate, the radiation-sensing region being configured todetect radiation that enters the first substrate through the secondside; a first interconnect structure disposed over the first side of thefirst substrate; a first isolation layer disposed over the firstinterconnect structure; and a first dielectric layer disposed over thefirst isolation layer, wherein the first isolation layer and the firstdielectric layer have different material compositions. The method alsoincludes a step of providing an Application Specific Integrated Circuit(ASIC) wafer that includes: a second substrate; a second interconnectstructure disposed over the second substrate; a second isolation layerdisposed over the second interconnect structure; and a second dielectriclayer disposed over the second isolation layer, wherein the secondisolation layer and the second dielectric layer have different materialcompositions. The method further includes a step of bonding the sensorwafer and the ASIC wafer together at least in part through the firstdielectric layer and the second dielectric layer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. An image sensor, comprising: a first device thatincludes: a first substrate; a first interconnect structure thatincludes a plurality of first metal lines; a first isolation layer,wherein the first metal lines are disposed between the first substrateand the first isolation layer; a second device that includes: a secondsubstrate; a second interconnect structure that includes a plurality ofsecond metal lines; a second isolation layer, wherein the second metallines are disposed between the second substrate and the second isolationlayer; wherein: the first device and the second device are bondedtogether through a bonding interface; a first structure in the firstsubstrate is at least partially located over one of the first metallines; a second structure in the first substrate extends through thebonding interface and is at least partially located over one of thesecond metal lines; and a continuous conductive element is disposed inboth the first structure and the second structure and is electricallycoupled to both the one of the first metal lines and the one of thesecond metal lines, wherein a first portion of the conductive elementdisposed in the first structure defines a first U-shaped structure, anda second portion of the conductive element disposed in the secondstructure defines a second U-shaped structure, and wherein a bottomsurface of the second U-shaped structure is in direct contact with anupper surface of the one of the second metal lines.
 2. The image sensorof claim 1, wherein the first isolation layer and the second isolationlayer each contain silicon nitride.
 3. The image sensor of claim 1,wherein the continuous conductive element is separated from the firstsubstrate by a dielectric material.
 4. The image sensor of claim 1,wherein the second device includes an Application Specific IntegratedCircuit (ASIC).
 5. The image sensor of claim 1, wherein the continuousconductive element does not completely fill the second structure.
 6. Theimage sensor of claim 1, wherein the first device further comprises afirst dielectric layer.
 7. The image sensor of claim 6, wherein thefirst isolation layer and the first dielectric layer have differentmaterial compositions.
 8. The image sensor of claim 1, wherein thesecond device further comprises a second dielectric layer.
 9. The imagesensor of claim 8, wherein the second isolation layer and the seconddielectric layer have different material compositions.
 10. The imagesensor of claim 1, wherein the first device further includes alight-sensing element disposed in the first substrate.
 11. The imagesensor of claim 10, wherein: the first interconnect structure isdisposed on a first side of the first substrate; and the light-sensingelement is configured to sense light that enters the first substratethrough a second side opposite the first side.
 12. The image sensor ofclaim 10, wherein: the light-sensing element is disposed in a pixelregion of the image sensor; and the continuous conductive element isdisposed in a periphery region of the image sensor that is differentfrom the pixel region.
 13. The image sensor of claim 12, wherein theimage sensor further comprises a bonding pad region and a scribe lineregion, the bonding pad region and the scribe line region beingdifferent than the pixel region and the periphery region.
 14. An imagesensor, comprising: a sensor portion that includes: a first substratehaving a first side and a second side opposite the first side; aradiation-sensing region formed in the first substrate, theradiation-sensing region being configured to detect radiation thatenters the first substrate through the second side; a first interconnectstructure disposed over the first side of the first substrate, the firstinterconnect structure including one or more first metal lines; a firstisolation layer disposed over the first interconnect structure; and afirst dielectric layer disposed over the first isolation layer such thatthe first isolation layer is disposed between the first interconnectstructure and the first dielectric layer, wherein the first isolationlayer and the first dielectric layer have different materialcompositions; an Application Specific Integrated Circuit (ASIC) portionthat includes: a second substrate; a second interconnect structuredisposed over the second substrate, the second interconnect structureincluding one or more second metal lines; a second isolation layerdisposed over the second interconnect structure; and a second dielectriclayer disposed over the second isolation layer such that the secondisolation layer is disposed between the second interconnect structureand the second dielectric layer, wherein the second isolation layer andthe second dielectric layer have different material compositions;wherein: the sensor portion and the ASIC portion are bonded together atleast in part through the first dielectric layer and the seconddielectric layer; a first structure extends partially through the firstsubstrate and is partially located over one of the first metal lines; asecond structure extends completely through the first substrate, thefirst interconnect structure, the first isolation layer, the firstdielectric layer, the second dielectric layer, and the second isolationlayer, wherein the second structure is partially located over one of thesecond metal lines; and a continuous conductive layer is disposed in thefirst structure and in the second structure, wherein the continuousconductive layer electrically interconnects the first metal line locatedunder the first structure to the second metal line located under thesecond structure, wherein a portion of the conductive layer disposed inthe second structure includes side segments and a bottom segmentconnecting the side segments, wherein the side segments are disposed onsidewalls of at least the first and second isolation layers and thefirst and second dielectric layers, and wherein the bottom segment isdisposed on the one of the second metal lines.
 15. The image sensor ofclaim 14, wherein: the first dielectric layer and the second dielectriclayer each contain silicon oxide; and the first isolation layer and thesecond isolation layer each contain silicon nitride.
 16. The imagesensor of claim 14, wherein the continuous conductive layer is separatedfrom a side surface of the first substrate by a third dielectric layer.17. The image sensor of claim 14, wherein the continuous conductivelayer does not completely fill the second structure.
 18. The imagesensor of claim 14, wherein: the image sensor comprises a pixel region,a periphery region, a bonding pad region, and a scribe line region thatare each different from one another; the radiation-sensing region isdisposed in the pixel region; and the continuous conductive layer isdisposed in the periphery region.
 19. An image sensor, comprising: asensor portion that includes: a first substrate having a first side anda second side opposite the first side; a radiation-sensing region formedin the first substrate, the radiation-sensing region being configured todetect radiation that enters the first substrate through the secondside; a first interconnect structure disposed over the first side of thefirst substrate, the first interconnect structure including one or morefirst metal lines; a first silicon nitride layer disposed over the firstinterconnect structure; and a first silicon oxide layer disposed overthe first silicon nitride layer, wherein the first silicon nitride layerand the first silicon oxide layer have different material compositions,and wherein the first interconnect structure and the first silicon oxidelayer are disposed on opposite sides of the first silicon nitride layer;an Application Specific Integrated Circuit (ASIC) portion that includes:a second substrate; a second interconnect structure disposed over thesecond substrate, the second interconnect structure including one ormore second metal lines; a second silicon nitride layer disposed overthe second interconnect structure; and a second silicon oxide layerdisposed over the second silicon nitride layer, wherein the secondsilicon nitride layer and the second silicon oxide layer have differentmaterial compositions, and wherein the second interconnect structure andthe second silicon oxide layer are disposed on opposite sides of thesecond silicon nitride layer; wherein: the sensor portion and the ASICportion are bonded together at least in part through the first siliconoxide layer and the second silicon oxide layer; a shallow structureextends partially through the first substrate and is partially locatedover one of the first metal lines; a deep structure extends completelythrough the first substrate, the first interconnect structure, the firstsilicon nitride layer, the first silicon oxide layer, the second siliconoxide layer, and the second silicon nitride layer, wherein the deepstructure is deeper than the shallow structure and is partially locatedover one of the second metal lines; a continuous conductive layer thatat least partially fills the shallow structure and the deep structure,wherein a first segment of the continuous conductive layer is in directphysical contact with the first metal line located under the shallowstructure, and a second segment of the continuous conductive layer is indirect physical contact with the second metal line located under thedeep structure; and a portion of the continuous conductive layerdisposed in the deep structure includes side segments and a bottomsegment connecting the side segments, wherein the side segments aredisposed on sidewalls of at least the first and second silicon oxidelayers and the first and second silicon nitride layers, and wherein thebottom segment is disposed on the one of the second metal lines.
 20. Theimage sensor of claim 19, wherein: the image sensor comprises a pixelregion, a periphery region, a bonding pad region, and a scribe lineregion that are each different from one another; the radiation-sensingregion is located in the pixel region; and the continuous conductivelayer is located in the periphery region.